PASCAL : 2D/3D R, L, C Simulator
with Floating Dummy Metals
Dummy metals are usually floating in ASIC. Conventional capacit-
ance simulators can’t simulate the floating dummy metals within
a practical time. Samsung developed patent-pending PASCAL to
simulate the capacitance of the floating dummy metals. It is an essential
tool for the design guide for dummy rules and the electrical simulation
of dummy metal impact in the full-chip RC extraction and subsequent
delay calculation.
ChampiGeo: Effective Geometry Generator for Floating
Dummy Metal.
In order to simulate the Chip-Level capacitance impact of floating
dummy metals, a patent-pending methodology has been developed
to transform and generate the effective interconnect geometry which
include the floating dummy metal effect using PASCAL. This effective
geometry can be used in the conventional Full-Chip RC Extraction
and subsequent timing Delay simulation.
ChampiIDF: Intelligent Dummy Filler for CMP Process
Improvement
The CMP thickness is not proportional to the local density, but
to the effective density due to the pad bending. Conventional rule-based
dummy filling is not enough for planarization. Dummy metals may
also causes electrical timing and device matching problems due to
the capacitance increase. ChampiIDF places dummy metals intelligently
to solve the conflict between the planarity and timing closure/device
matching using patent-pending algorithms.
ICE : Interconnect Worst Case Modeling for Process
Variation
Worst case model based on process skew corner is too conservative.
ICE generates the interconnect worst case model which predicts the
3-sigma delay based on the Monte Carlo simulation.
Champs: Oxide/STI CMP Profile Modeling and Simulation
It is designed specifically to allow process and design engineers
to determine the expected CMP profile of production chips before
they are fabricated. Champs is the CMP profile simulator for Oxide/STI
CMP. It has been used as an industry production tool for more than
5 years.
ChampiSim-Cu: Cu CMP Profile Modeling and Simulation
It is designed specifically to allow process and design engineers
to determine the expected CMP profile of production chips before
they are fabricated. ChampiSim-Cu is the Cu CMP simulator based
on MIT Cu CMP model.
ChampiAn : CMP Process Analysis and Characterization
In process development applications, it aids engineers in the
development of CMP processes using the patterned test wafers.
ChampiAn allows the process engineer to 1) enter the experiment
conditions into the software, 2) automatically load data from a
wide
variety of metrology tools, 3) calculate critical empirical parameters
such as removal rate and planarization length for the accurate CMP
profile simulation
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