SKW 6-3 Copper Wafer
| Copper Overview | SKW6-1 | SKW6-2 | SKW6-3
This mask is designed to characterize and understand pattern dependent variation of dishing and erosion in Chemical Mechanical Polishing (CMP) on a wide range of area, density and pitch structures (thus, different line width and line space combinations). This mask also enables further modeling effort for better process optimization and integration.
Features

• 8", 12" Wafers
• 20mm x 20mm Die Size
• 0.25um Minimum Feature Size
 - 0.13um Minimum Feature Size for future
• Good for both single layer and multi-level with e-test capability
• Same as the SEMATECH 854 with added enhancements
- Dedicated oxide measurement sites
- One test block for all single lines
- Realistic interconnect lines
Mask & Layout
Layout factors
Structures Description
Pitch Structures 0.25um to 100um lines
Density Structures 1% to 99% array regions
Area Structures (Lines) 10um x 10um to 1500um x 1500um
Interconnect Lines, Bus Lines & Slotting
Dedicated oxide measurement sites
Cross sectional view
version 3.0 : with Nitride layer
version 3.1 : without Nitride layer
SKW Associates, Inc.